RF systems
need power amplifiers (PAs) to deliver linear efficient high output power. As
systems move to higher-order modulation schemes
such as 64/128/256 Quadrature Amplitude Modulation (QAM), they also must
deliver high linearity and efficiency in denser environment with stringent
peak-to-average power ratio (PAPR). A
new generation of Gallium Nitride (GaN)
on Silicon Carbide (SiC) Monolithic Microwave Integrated Circuits (MMIC)
PAs offers a solution to these challenges with highest power density to
generate high linear output power with high efficiency.