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Cree: Power Amplifier Demonstration of a fully matched 500W/50Ω S-Band GaN HEMT

Cree RF wrote: In this video, Cree demonstrates the performance of an 500W Gallium Nitride (GaN) transistor (HEMT). Delivering 700 watts of typical saturated RF pulsed power, the CGHV31500F is offered for air traffic control radar systems. The 50Ω, fully matched GaN HEMT operates over a 2.7 - 3.1GHz bandwidth, exhibits 12dB power gain, and is packaged in an industry standard 0.7" x 0.9" ceramic/metal flange package.
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