RF systems need power amplifiers (PAs) to deliver linear efficient high output power. As systems move to higher-order modulation schemes  such as 64/128/256 Quadrature Amplitude Modulation (QAM), they also must deliver high linearity and efficiency in denser environment with stringent peak-to-average power ratio (PAPR).  A new generation of Gallium Nitride (GaN)  on Silicon Carbide (SiC) Monolithic Microwave Integrated Circuits (MMIC) PAs offers a solution to these challenges with highest power density to generate high linear output power with high efficiency.