This video shows how to extract a GaN FET transistor compact model from pulsed IV and pulsed S parameter measurements using IVCAD, and export the model in NI-AWR circuit simulato Microwave Office.
Microwave Journal editors Pat Hindle and Gary Lerude talk with Tom Kole, Vice President of Sales and Marketing, and Apet Barsegyan, Vice President, Chief Operating Officer, at Integra RF Power…